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                           BYC15-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 5 of 11 NXP Semiconductors BYC15-600 Hyperfast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =30A; Tj = 150 °C; see Figure 3 -1.72.3V IF =15A; Tj =25°C; see Figure 3 -1.92.9V IF =15A; Tj = 150 °C; see Figure 3 -1.42V IR reverse current VR =500V; Tj =100°C - 1.1 3 mA VR =600V; Tj = 25 °C - 12 200 μA Dynamic characteristics trr reverse recovery time IF =15A; VR = 400 V; dIF/dt = 500 A/μs; Tj =100°C; see Figure 4 - 3240ns IF =1A; VR =30V; dIF/dt = 50 A/μs; Tj = 25 °C; see Figure 4 - 3555ns IF =15A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; see Figure 4 -19-ns IRM peak reverse recovery current IF =15A; VR = 400 V; dIF/dt = 500 A/μs; Tj =125°C; see Figure 4 -9.512A IF =15A; VR = 400 V; dIF/dt = 50 A/μs; Tj =125°C; see Figure 4 -37.5A VFR forward recovery voltage IF =15A; dIF/dt = 100 A/μs; Tj =25°C; see Figure 5 -811V (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 3. Forward current as a function of forward voltage Fig 4. Forward recovery definitions 003aac082 0 01234V F (V) 10 20 30 40 50 IF (A) (1) (2) (3) 001aab911 trr time 100 % 10 % IF dlF dt IR IRM Qr |